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Electronic-Grade High-Quality Perovskite Single Crystals by a Steady Self-Supply Solution Growth for High-Performance X-ray Detectors.
Advanced Materials ( IF 27.4 ) Pub Date : 2020-07-06 , DOI: 10.1002/adma.202001540 Wenzhen Wang 1 , Hua Meng 1 , Huanzhen Qi 1 , Haitao Xu 2 , Wenbin Du 1 , Yiheng Yang 1 , Yongsheng Yi 1 , Shengqi Jing 1 , Shanhu Xu 1 , Feng Hong 3 , Juan Qin 1 , Jian Huang 1 , Zhan Xu 1 , Yanyan Zhu 1 , Run Xu 1 , Jianming Lai 1 , Fei Xu 3 , Linjun Wang 1 , Jingtao Zhu 4
Advanced Materials ( IF 27.4 ) Pub Date : 2020-07-06 , DOI: 10.1002/adma.202001540 Wenzhen Wang 1 , Hua Meng 1 , Huanzhen Qi 1 , Haitao Xu 2 , Wenbin Du 1 , Yiheng Yang 1 , Yongsheng Yi 1 , Shengqi Jing 1 , Shanhu Xu 1 , Feng Hong 3 , Juan Qin 1 , Jian Huang 1 , Zhan Xu 1 , Yanyan Zhu 1 , Run Xu 1 , Jianming Lai 1 , Fei Xu 3 , Linjun Wang 1 , Jingtao Zhu 4
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High‐quality perovskite single crystals with large size are highly desirable for the fundamental research and high energy detection application. Here, a simple and convenient solution method, featuring continuous‐mass transport process (CMTP) by a steady self‐supply way, is shown to keep the growth of semiconductor single crystals continuously stable at a constant growth rate until an expected crystal size is achieved. A significantly reduced full width at half‐maximum (36 arcsec) of the (400) plane from the X‐ray rocking curve indicates a low angular dislocation of 6.8 × 106 cm−2 and hence a higher crystalline quality for the CH3NH3PbI3(MAPbI3) single crystals grown by CMTP as compared to the conventional inverse temperature crystallization (ITC) method. Furthermore, the CMTP‐based single crystals have lower trap density, reduced by nearly 200% to 4.5 × 109 cm−3, higher mobility increased by 187% to 150.2 cm2 V−1 s−1, and higher mobility–lifetime product increased by around 450% to 1.6 × 10−3 cm2 V−1, as compared with the ITC‐grown reference sample. The high performance of the CMTP‐based MAPbI3 X‐ray detector is comparable to that of a traditional high‐quality CdZnTe device, indicating the CMTP method as being a cost‐efficient strategy for high‐quality electronic‐grade semiconductor single crystals.
中文翻译：
稳定的自供电解决方案，为高性能X射线探测器提供电子级高质量钙钛矿单晶。
高质量，大尺寸的钙钛矿单晶非常适合基础研究和高能检测应用。此处显示了一种简单方便的解决方法，该方法具有通过稳定的自供电方式进行连续质量传输过程（CMTP）的功能，可保持半导体单晶的生长以恒定的增长率连续稳定，直到达到预期的晶体尺寸。X射线摇摆曲线在（400）平面的半最大（36 arcsec）处的全宽显着减小，表明6.8×10 6 cm -2的低角度位错，因此CH 3 NH的晶体质量更高3碘化铅3（MAPbI 3与传统的逆温度结晶（ITC）方法相比，通过CMTP生长的单晶。此外，基于CMTP的单晶具有较低的陷阱密度，减少了近200％，为4.5×10 9 cm -3，较高的迁移率增加了187％，至150.2 cm 2 V -1 s -1，并且迁移率与寿命的乘积较高与ITC生长的参考样品相比，增加了约450％，达到1.6×10 -3 cm 2 V -1。基于CMTP的MAPbI 3的高性能 X射线探测器可与传统的高质量CdZnTe器件相媲美，这表明CMTP方法是高品质电子级半导体单晶的一种经济高效的策略。
更新日期：2020-08-18
中文翻译：
稳定的自供电解决方案，为高性能X射线探测器提供电子级高质量钙钛矿单晶。
高质量，大尺寸的钙钛矿单晶非常适合基础研究和高能检测应用。此处显示了一种简单方便的解决方法，该方法具有通过稳定的自供电方式进行连续质量传输过程（CMTP）的功能，可保持半导体单晶的生长以恒定的增长率连续稳定，直到达到预期的晶体尺寸。X射线摇摆曲线在（400）平面的半最大（36 arcsec）处的全宽显着减小，表明6.8×10 6 cm -2的低角度位错，因此CH 3 NH的晶体质量更高3碘化铅3（MAPbI 3与传统的逆温度结晶（ITC）方法相比，通过CMTP生长的单晶。此外，基于CMTP的单晶具有较低的陷阱密度，减少了近200％，为4.5×10 9 cm -3，较高的迁移率增加了187％，至150.2 cm 2 V -1 s -1，并且迁移率与寿命的乘积较高与ITC生长的参考样品相比，增加了约450％，达到1.6×10 -3 cm 2 V -1。基于CMTP的MAPbI 3的高性能 X射线探测器可与传统的高质量CdZnTe器件相媲美，这表明CMTP方法是高品质电子级半导体单晶的一种经济高效的策略。
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