Abstract Cu-doped ZnO (2 wt%) thin films are deposited on p-Si (1 0 0) substrates using pulsed laser deposition (PLD) technique at room temperature. X-ray diffraction study shows the amorphous nature of these films, whereas scanning electron microscopy and atomic force microscopy images show their granular nature. A diode-like rectifying behaviour is revealed by the current-voltage characteristics of ZnO:Cu/p-Si heterojunction under both dark and light illumination conditions. In addition, it is demonstrated that there is a large enhancement in the photocurrent along with high sensitivity and responsivity of the diode. This study will be useful for the fabrication of ZnO:Cu based photodetectors.

中文翻译：

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脉冲激光沉积 ZnO:Cu 薄膜的光响应

摘要 在室温下使用脉冲激光沉积 (PLD) 技术在 p-Si (1 0 0) 衬底上沉积 Cu 掺杂的 ZnO (2 wt%) 薄膜。X 射线衍射研究显示了这些薄膜的无定形性质，而扫描电子显微镜和原子力显微镜图像显示了它们的颗粒性质。ZnO:Cu/p-Si 异质结在暗光和亮光条件下的电流-电压特性揭示了类似二极管的整流行为。此外，还证明了光电流的大幅增强以及二极管的高灵敏度和响应度。这项研究将有助于制造基于 ZnO:Cu 的光电探测器。