Abstract A temperature growth and a decrease in impurity ion concentration result in a sensitivity increase of Al2O3:Mn ceramics to the ionizing radiation. The highest sensitivity to the ionizing radiation for Mn-doped alumina ceramics is observed for minimum dopant concentration and a maximum of temperature sintering (maximum sintering temperature). A sublinear increase in a thermoluminescence intensity with a growing dose is observed in the range of 1–400 Gy for the peak at 460 K and in the range of 1–100 Gy for the peak at 620 K for the Mn-doped alumina ceramic (1 wt % of Mn in a solution) annealed under vacuum at the temperature of 1700°С for 2 h.

中文翻译：

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掺杂锰的氧化铝陶瓷合成方式对电离辐射敏感性的影响

摘要 随着温度的升高和杂质离子浓度的降低，Al2O3:Mn陶瓷对电离辐射的敏感性增加。对于掺杂剂浓度最低和烧结温度最高（最高烧结温度），Mn掺杂氧化铝陶瓷对电离辐射的敏感性最高。在 460 K 处的峰值在 1-400 Gy 范围内观察到热释光强度随着剂量的增加呈亚线性增加，对于 Mn 掺杂的氧化铝陶瓷在 620 K 处的峰值在 1-100 Gy 范围内观察到（溶液中 1 wt% 的 Mn 在真空下在 1700°С 的温度下退火 2 小时。