Abstract PbS has attracted much attention as an excellent thermoelectric material with high development space at middle temperature scope. The thermoelectric performance for n-type PbS was boosted by the cooperative effects of resonance level and Cu dynamic doping in our research. In the first place, In doping improved the electrical transport performance of n-type PbS effectively on account of optimal carrier concentration and resonant level effects, and reduced the lattice thermal conductivity by reason of heightened phonon scattering through impurity atoms scattering simultaneously. Secondly, Cu dynamic doping further increased average power factor to ~18.8 μW cm−1 K−2 at 423 K- 823 K of Pb0.995In0.005S+3%Cu owing to higher Seebeck coefficients and suppressed electronic thermal transports at vast temperature span. In result, the best thermoelectric figure of merit (ZT) of Pb0.995In0.005S+3%Cu at 723 K reached ~1.1 and a record large average ZT (ZTave) of Pb0.995In0.005S+3%Cu was achieved ~ 0.8 at 423 K-823 K, which is vital in the implementation of thermoelectric technology.

中文翻译：

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通过 In 共振能级和 Cu 动态掺杂的协同集成提高 n 型 PbS 的热电性能

摘要 PbS作为一种在中温范围内具有较大发展空间的优良热电材料备受关注。在我们的研究中，共振能级和 Cu 动态掺杂的协同效应提高了 n 型 PbS 的热电性能。首先，由于最佳载流子浓度和共振能级效应，In掺杂有效提高了n型PbS的电传输性能，同时由于杂质原子散射导致声子散射增强，从而降低了晶格热导率。其次，由于较高的塞贝克系数和在较大温度跨度下抑制电子热传输，Cu 动态掺杂进一步将 Pb0.995In0.005S+3%Cu 的 423 K-823 K 的平均功率因数进一步提高至 ~18.8 μW cm-1 K-2 . 结果，