In this brief, the center potential based analysis of Si and AlGaN/GaN gate all around field effect transistors (GAA-FET) is presented. The center potential is calculated for different values of channel length, channel height, doping concentration, and thickness of oxide layer using numerical simulations and analytical modeling. The results obtained using numerical simulations through TCAD are validated and found in decent accord with the analytical modeling. The lower effective mass of the III-V channel material results in the lower density of states (DOS), so quantum capacitance reduces significantly in III-V GAA-FET as compared to Si. This small DOS of III-V directly results in a low sheet carrier concentration at a certain gate overdrive voltage for III-V GAA-FET. The analog and linearity/distortion parameters of III-V and Si GAA-FET are calculated and compared. The utility of the III-V GAA-FET extends in high speed and low power digital logic applications, RF design applications including low noise and very high frequency due to better electron transport properties than Si.

在本简介中，将对场效应晶体管（GAA-FET）周围的Si和AlGaN / GaN栅极进行基于中心电势的分析。使用数值模拟和分析模型，针对沟道长度，沟道高度，掺杂浓度和氧化层厚度的不同值计算中心电势。通过TCAD数值模拟获得的结果得到了验证，并与分析模型相称。III-V沟道材料的较低有效质量导致较低的态密度（DOS），因此与Si相比，III-V GAA-FET中的量子电容显着降低。对于III-V GAA-FET，在一定的栅极过驱动电压下，III-V的这种较小的DOS直接导致较低的薄层载流子浓度。计算并比较了III-V和Si GAA-FET的模拟和线性/失真参数。III-V GAA-FET的用途扩展到了高速和低功耗数字逻辑应用中，由于其电子传输性能优于Si，因此射频设计应用包括了低噪声和非常高的频率。