Photodetectors based on polycrystalline lead salts are widely used to detect light in the mid-infrared range because they can be used at room temperature. In their fabrication, the sensitization process is considered to be the most critical factor. In this work, the crystalline structure of PbSe films deposited by electron-beam evaporation was analyzed by scanning electron microscopy, x-ray diffraction, and x-ray photoemission spectroscopy. The results showed that lead oxides were formed during the annealing process. We also investigated the electrical properties of the samples by Hall-effect measurements. In photodetection experiments at room temperature, the PbSe-based photodetectors showed responsivity and detectivity of 0.16 A/W and 6.66 × 10⁸ cm Hz^1/2/W, respectively. Remarkably, we measured a photocurrent even without applying a bias voltage, which implies that the p–n junctions separate the carriers in these films, thus also proving the existence of micro p–n junctions in the film. A carrier separation model is proposed to describe the conduction process.

基于多晶铅盐的光电探测器广泛用于检测中红外范围的光，因为它们可以在室温下使用。在制造过程中，敏化过程被认为是最关键的因素。在这项工作中，通过扫描电子显微镜，X射线衍射和X射线光发射光谱分析了通过电子束蒸发沉积的PbSe膜的晶体结构。结果表明，在退火过程中形成了氧化铅。我们还通过霍尔效应测量研究了样品的电性能。在室温下的光检测实验中，基于PbSe的光检测器的响应度和检测度分别为0.16 A / W和6.66×10 ⁸  cm Hz ^1/2/ W。值得注意的是，即使没有施加偏压，我们也测量了光电流，这意味着p - n结将这些膜中的载流子分开，从而也证明了膜中存在微p - n结。提出了一种载流子分离模型来描述传导过程。