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International pilot study CCQM-P193: 10 μmol mol−1 water vapour in nitrogen
Metrologia ( IF 2.4 ) Pub Date : 2020-01-01 , DOI: 10.1088/0026-1394/57/1a/08015
P J Brewer 1 , B Gieseking 1 , V F Ferracci 1 , M Ward 1 , P Carroll 1 , S Bell 1 , B Hall 2
Affiliation  

The measurement of trace amounts of water in process gases is of paramount importance to a number of manufacturing processes. Water is considered to be one of the most difficult impurities to remove from gas supply systems and there is strong evidence that the presence of water contamination in semiconductor gases has a measurable impact on the quality and performance of devices. Consequently, semiconductor manufacturers are constantly reducing target levels of water in purge and process gases. As the purity of gases improves, the problem of quantifying contamination and ensuring that the gases are within specification at the point of use becomes more challenging. There are several established techniques for detecting trace water vapour in process gases. These include instruments based on the chilled mirror principle which measures the dew-point of the gas and the quartz crystal adsorption principle which measures the adsorption of water vapour into a crystal with a hygroscopic coating. Most recently, spectroscopic instruments such as those employing cavity ring-down spectroscopy (CRDS) have become available. The calibration of such instruments is a difficult exercise because of the very limited availability of accurate water vapour standards. This CCQM pilot study aims to assess the analytical capabilities of laboratories for measuring the composition of 10 μmol mol-1 water vapour in nitrogen. Field Amount of substance Subject Comparison of the composition of water vapour in nitrogen Table of

中文翻译:

国际试点研究 CCQM-P193:氮气中的 10 μmol mol−1 水蒸气

过程气体中痕量水的测量对于许多制造过程至关重要。水被认为是最难从气体供应系统中去除的杂质之一,并且有强有力的证据表明,半导体气体中水污染的存在对器件的质量和性能具有可测量的影响。因此,半导体制造商不断降低吹扫和工艺气体中水的目标水平。随着气体纯度的提高,量化污染和确保气体在使用点符合规格的问题变得更具挑战性。有几种成熟的技术可用于检测工艺气体中的痕量水蒸气。其中包括基于冷镜原理测量气体露点和石英晶体吸附原理的仪器,测量水蒸气吸附到具有吸湿涂层的晶体中。最近,诸如采用腔衰荡光谱 (CRDS) 的光谱仪器已经可用。由于精确水蒸气标准的可用性非常有限,因此此类仪器的校准是一项困难的工作。该 CCQM 试点研究旨在评估实验室测量氮气中 10 μmol mol-1 水蒸气成分的分析能力。现场物质量 实验对象 氮气中水蒸气成分比较表 诸如采用腔衰荡光谱(CRDS)的光谱仪器已经可用。由于精确水蒸气标准的可用性非常有限,因此此类仪器的校准是一项困难的工作。该 CCQM 试点研究旨在评估实验室测量氮气中 10 μmol mol-1 水蒸气成分的分析能力。现场物质量 实验对象 氮气中水蒸气成分比较表 诸如采用腔衰荡光谱(CRDS)的光谱仪器已经可用。由于精确水蒸气标准的可用性非常有限,因此此类仪器的校准是一项困难的工作。该 CCQM 试点研究旨在评估实验室测量氮气中 10 μmol mol-1 水蒸气成分的分析能力。现场物质量 实验对象 氮气中水蒸气成分比较表
更新日期:2020-01-01
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