Microdefect Characteristics in Cast‐Mono Silicon Wafers Induced by Slurry Sawing,Physica Status Solidi (A) - Applications and Materials Science

当前位置： X-MOL 学术 › Phys. Status Solidi A › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Microdefect Characteristics in Cast‐Mono Silicon Wafers Induced by Slurry Sawing
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-07-04 , DOI: 10.1002/pssa.202000258
Hangfei Li ₁ , Xuegong Yu ₁ , Chuanhong Jin ₁ , Deren Yang ₁

Affiliation

Cast‐mono crystalline silicon (CM‐Si) wafer is a new promising material for the fabrication of silicon solar cells. This study demonstrates the characteristics and distribution behaviors of microdefects in the damaged layer of CM‐Si wafer induced by slurry sawing using the transmission electron microscopy (TEM) method. It is found that a large number of stacking faults and dislocations are formed around the sharp kerfs caused by the indenting effect of sharp grits, which is associated with the release of remaining stress after the propagation of micro cracks. Meanwhile, amorphous silicon phase appears in the round kerf region induced by round grits, without any crystalline defects around. It indicates that plastic deformation is an important way to release the strain in the brittle silicon material during slurry sawing. In addition, nano cracks coated with silicon oxide layer and originated from the piling‐up of dense edge dislocations can be observed beneath the smooth surface of slurry‐sawn wafers. These results help us better to understand the generation mechanism of microdefects during slurry sawing process.

中文翻译：

泥浆锯切引起的铸造单晶硅晶片的微缺陷特征

铸造单晶硅（CM-Si）晶片是用于制造硅太阳能电池的一种新的有前途的材料。这项研究证明了使用透射电子显微镜（TEM）方法通过浆料锯切引起的CM-Si晶片损伤层中微缺陷的特征和分布行为。结果发现，由于锋利的砂砾的压痕效应，在锋利的切缝周围形成了大量的堆垛层错和错位，这与微裂纹扩展后残余应力的释放有关。同时，非晶硅相出现在由圆形砂砾引起的圆形切口区域中，周围没有任何晶体缺陷。这表明塑性变形是在浆液锯切过程中释放脆性硅材料中应变的重要方法。此外，在浆状锯片的光滑表面下方可以观察到由氧化硅层覆盖的纳米裂纹，该裂纹源自致密的边缘位错的堆积。这些结果有助于我们更好地了解浆料锯切过程中微缺陷的产生机理。

更新日期：2020-07-04

点击分享查看原文

点击收藏

阅读更多本刊最新论文