Transition metal oxide films HfO₂, ZrO₂, Ta₂O₅, TiO₂, Nb₂O₅, and Y₂O₃, together with Al₂O₃ and SiO₂ for reference, were deposited by atomic layer deposition (ALD) and investigated. For all the films ALD process was performed within the same reactor at two temperature ranges 100–125^∘C and 250–300^∘C. Both water and ozone were used as oxygen sources if processes were available. Most films are amorphous as-deposited, but HfO₂, ZrO₂, and Y₂O₃ can be crystalline, depending on deposition temperature and oxygen source.

After deposition and initial characterization, the films were annealed to different temperatures up to 1200^∘C, depending on the material, to observe the crystallization process.

When crystalline phases were observed, grain sizes have been derived from the X-ray diffractograms and compared with feature sizes in SEM images. RMS analysis revealed a general tendency - an increase of roughness with the appearance of crystallization.

The temperature-dependent morphological investigations were supported by breakdown field measurements. Those are also strongly affected when a film becomes crystalline. Most values observed for break down fields agree with literature, some values exceed previously reported numbers.

过渡金属氧化物膜的HfO ₂，的ZrO ₂，钽₂ ø ₅，的TiO ₂，NB ₂ ø ₅，和Y ₂ ö ₃用Al，一起₂ ö ₃和SiO ₂供参考，通过原子层沉积被沉积（ALD）并进行调查。范围100-125对于所有在两个温度相同的反应器内进行薄膜ALD工艺^∘ C和250-300 ^∘ C.水和臭氧用作氧源，如果过程可用。大多数薄膜是非晶态沉积的，但是HfO ₂，ZrO ₂取决于沉积温度和氧气源，Y ₂ O ₃可以是晶体。

沉积和初始特性后，将膜退火到不同的温度高达1200 ^∘ C，取决于材料，观察其结晶过程。

当观察到结晶相时，晶粒尺寸已从X射线衍射图得出，并与SEM图像中的特征尺寸进行了比较。RMS分析显示出总体趋势-粗糙度随结晶外观的增加而增加。

温度依赖性形态研究得到击穿场测量的支持。当膜变成结晶时，那些也会受到很大影响。对于分解字段观察到的大多数值与文献一致，某些值超过了先前报告的数字。