Junctionless transistors (JLTs) are one of attractive candidates for further scaling down thanks to their promising advantages based on a structural simplicity without PN junctions, and their physical operation is quite different from traditional inversion-mode (IM) transistors. In this paper, we investigated the subthreshold operation of tri-gate JLTs with various effective width (W_eff) and compared to that of IM transistors. The on current to off current ratio (I_on/I_off) and subthreshold swing (SS) of JLTs were varied dramatically as changing W_eff. In addition, a better immunity against short channel effects (SCEs) of JLTs was proven. Physical operation mechanism on the subthreshold regime was also discussed in detail with considering distribution of mobile charge carriers, maximum depletion width, full-depletion mode, bulk neutral and surface accumulation conduction.

无结晶体管（JLT）凭借其基于无PN结的结构简单性的有前途的优势而成为进一步缩小尺寸的诱人候选者之一，并且其物理操作与传统的反转模式（IM）晶体管完全不同。在本文中，我们研究了具有不同有效宽度（W _eff）的三栅极JLT的亚阈值操作，并将其与IM晶体管进行了比较。JLT的导通电流与截止电流之比（I _on / I _off）和亚阈值摆幅（SS）随着W _eff的变化而显着变化。此外，还证明了对JLT的短通道效应（SCE）具有更好的免疫力。还考虑了移动载流子的分布，最大耗尽宽度，全耗尽模式，中性和表面累积传导，详细讨论了亚阈值状态下的物理运行机制。