Improving the hole carrier mobility of organic hole-transporting materials is critical for the development of advanced quantum dot light-emitting diodes (QLEDs). Here, a simple method is reported for enhancing the hole-charge mobility in poly(9-vinylcarbazole), PVK. Doping of the PVK using the molecular Lewis acid tris(pentafluorophenyl)borane as a dopant is shown to have a powerful effect on the hole-charge mobility, and the performance of the QLEDs. By adjusting the amount of dopant, the p-type Hall mobility can be increased up to 3.3-fold, and thereby, the external quantum efficiency and current efficiency of QLEDs are improved by 132% and 249%, respectively.

改善有机空穴传输材料的空穴载流子迁移率对于开发高级量子点发光二极管（QLED）至关重要。在此，报道了一种用于提高聚（9-乙烯基咔唑）PVK中空穴电荷迁移率的简单方法。使用分子路易斯酸三（五氟苯基）硼烷作为掺杂剂对PVK进行掺杂显示出对空穴电荷迁移率和QLED性能的强大影响。通过调整掺杂剂的数量，可以将p型霍尔迁移率提高到3.3倍，从而使QLED的外部量子效率和电流效率分别提高了132％和249％。