Device reconfigurability refers to the ability to choose N or P type for the same structure. Such reconfigurable operation is demonstrated herein for a silicon nanotube (SiNT) structure using three-dimensional (3D) technology computer-aided design (TCAD) numerical simulations. The reconfigurable field-effect transistor (RFET) can exhibit N- or P-type operation via the application of an appropriate bias to a program gate. The regular (i.e., control) gate is also present in the RFET. In the planar nanowire structure, the program gate is placed beside the regular/control gate. Since the SiNT structure has both inner and outer gates, we propose to use the inner gate as the control gate and the outer gate as the program gate, to achieve device reconfigurability in the SiNT structure. Two approaches are presented to achieve such reconfigurability, based on a (1) single or (2) double program gate. The metrics considered in this work are the ON current (I_ON), OFF current (I_OFF), \(\frac{{I_{\text{ON}} }}{{I_{\text{OFF}} }}\) ratio, and unity-gain cutoff frequency (f_T). The effects of the outer diameter, inner diameter, and tube wall thickness of the tube are also discussed. The outer and inner diameters of the tube are found to determine the above-mentioned performance parameters. While a smaller inner diameter is preferred from the point of view of the \(\frac{{I_{\text{ON}} }}{{I_{\text{OFF}} }}\) ratio, a larger inner diameter is desired from the radio frequency (RF) perspective.

中文翻译：

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使用数值模拟的可重构硅纳米管

设备可重配置性是指为相同结构选择N或P类型的能力。本文使用三维（3D）技术计算机辅助设计（TCAD）数值模拟针对硅纳米管（SiNT）结构演示了这种可重构操作。可重配置场效应晶体管（RFET）可以显示N-或P通过向程序门施加适当的偏压来进行类型操作。常规（即控制）栅极也存在于RFET中。在平面纳米线结构中，程序栅极位于规则/控制栅极旁边。由于SiNT结构同时具有内栅极和外栅极，因此我们建议使用内栅极作为控制栅极，并使用外栅极作为编程栅极，以实现SiNT结构中的器件可重构性。基于（1）单编程门或（2）双编程门，提出了两种方法来实现这种可重构性。在这项工作中考虑的指标是接通电流（I _ON），断开电流（I _OFF），\（\ frac {{I _ {\ text {ON}}}} {{I _ {\ text {OFF}}}} \）比率和单位增益截止频率（f_T）。还讨论了管的外径，内径和管壁厚度的影响。发现管的外径和内径以确定上述性能参数。从\（\ frac {{I _ {\ text {ON}}}} {{I _ {\ text {OFF}}}} \\）的角度来看，较小的内径是首选，但较大的内径从射频（RF）角度来看是理想的。