High performance and uniform thin-film transistors were fabricated on a grain-boundary (GB) free single crystal Si strip for the first time. Here sputter-SiO 2 gate insulator was used. Electron mobility μ was 548 cm 2 V −1 s −1 , subthreshold swing ss was 0.279 V dec −1 , and on/off ratio was 2.4 × 10 7 . Variability of ss was only 9.4% but that of μ was 34.2%. Carrier scattering was known to be dominated by GB in conventional polycrystalline Si, but it was dominated by phonon scattering in the GB-free Si strip irrespective of μ value. The μ deviation was shown to be due to crystal orientation variation along channel direction.

中文翻译：

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通过微雪佛龙激光束扫描法在单晶硅条上制备高性能薄膜晶体管

首次在无晶界（GB）的单晶硅条上制造了高性能且均匀的薄膜晶体管。这里使用溅射SiO 2栅极绝缘体。电子迁移率μ为548cm 2 V -1 s -1，亚阈值摆幅ss为0.279V dec -1，开/关比为2.4×10 7。ss的变异性仅为9.4％，而μ的变异性为34.2％。已知在常规的多晶Si中，载流子的散射以GB为主，但无μ的Si带中的声子散射以μ为主。示出了μ偏差是由于沿通道方向的晶体取向变化引起的。