GaN-based blue light-emitting diodes (LEDs) were radiated with 60Co γ-rays for an accumulated dose of up to 2.5 Mrad (SiO2). The radiation-induced current and 1/f noise degradations were studied when the devices operate at the high bias voltage. The current of GaN blue LED is determined by series resistance at the high bias voltage. Defects created by γ radiation in the LED lead to an increase in the series resistance，which causes the decrease of current. Based on the theory of Hooge mobility fluctuations, it suggests that the degradation of 1/f noise might also be attributed to these defects, which caused a decrease in the carrier mobility and the carrier number.

中文翻译：

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高偏压下γ辐射引起的GaN LED 1/f噪声衰减研究

GaN 基蓝色发光二极管 (LED) 用 60Co γ 射线辐射，累积剂量高达 2.5 Mrad (SiO2)。当器件在高偏置电压下工作时，研究了辐射感应电流和 1/f 噪声退化。GaN 蓝色 LED 的电流由高偏置电压下的串联电阻决定。LED中γ辐射产生的缺陷导致串联电阻增加，从而导致电流减小。基于 Hooge 迁移率波动理论，这表明 1/f 噪声的恶化也可能归因于这些缺陷，导致载流子迁移率和载流子数量的下降。