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Miniaturized SIW Bandpass Filter Based on TSV Technology for THz Applications
IEEE Transactions on Terahertz Science and Technology ( IF 3.2 ) Pub Date : 2020-07-01 , DOI: 10.1109/tthz.2020.2974091
Fengjuan Wang , Vasilis F. Pavlidis , Ningmei Yu

A miniaturized substrate integrated waveguide bandpass filter with an area of 0.682 × 0.210 mm2 is proposed based on through-silicon via (TSV) technology for terahertz (THz) applications. The design method of the THz cavity filter based on rectangular TSV is introduced and the filtering characteristics are investigated by the finite element method and the mode matching method. The rectangular TSV is substituted by cylindrical structures and the THz cavity filter is fabricated and measured in order to investigate the possibility of integration with typical three-dimensional integrated circuit manufacturing processes. The cavity filter utilizing cylindrical TSV exhibits a bandwidth of 0.051 THz centered at 0.331 THz, an insertion loss of 1.5 dB, and a reflection of higher than 15 dB in the passband.

中文翻译:

用于太赫兹应用的基于 TSV 技术的小型化 SIW 带通滤波器

基于用于太赫兹 (THz) 应用的硅通孔 (TSV) 技术,提出了一种面积为 0.682 × 0.210 mm2 的小型化衬底集成波导带通滤波器。介绍了基于矩形TSV的太赫兹空腔滤波器的设计方法,并通过有限元法和模式匹配法研究了滤波特性。矩形TSV被圆柱形结构取代,制造和测量太赫兹空腔滤波器,以研究与典型三维集成电路制造工艺集成的可能性。使用圆柱形 TSV 的腔体滤波器的带宽为 0.051 THz,以 0.331 THz 为中心,插入损耗为 1.5 dB,在通带中反射高于 15 dB。
更新日期:2020-07-01
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