Emerging broadband and millimeter-wave frequency applications, including 5G wireless communications, high-speed optical networks, radars, sensors, imaging and security systems, and measurement instrumentation, continue to expand and grow in the next decade. One of the key components of these systems is the broadband (including sub-6 GHz) and millimeter-wave power amplifier. The specific requirements, as well as the technology of choice (e.g., Si CMOS, SiGe, GaAs, GaN, and InP), are dictated by the application. This Transactions’ “Special Issue on Broadband and Millimeter-Wave Power Amplifiers” is aimed to publish technical papers focusing on the most recent research and development of broadband (including sub-6GHz) and millimeter-wave power amplifiers for emerging applications. The submitted papers went through the same peer-review process as regular submissions to this Transactions. After being carefully reviewed, 20 manuscripts were accepted for publication. The topics cover a wide range of areas, including millimeter-wave amplifiers in InP, Si SOI, SiGe, linearization techniques, 5G power amplifiers, and broadband and high-power GaN technologies.

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客座社论

在接下来的十年中，包括5G无线通信，高速光网络，雷达，传感器，成像和安全系统以及测量仪器在内的新兴宽带和毫米波频率应用将继续扩展和增长。这些系统的关键组件之一是宽带（包括6 GHz以下）和毫米波功率放大器。具体的要求以及所选择的技术（例如，Si CMOS，SiGe，GaAs，GaN和InP）由应用程序决定。本次交易的“宽带和毫米波功率放大器的特殊问题”旨在发布技术论文，重点是针对新兴应用的宽带（包括6GHz以下）宽带和毫米波功率放大器的最新研究和开发。提交的论文与对该交易的常规提交经过相同的同行评审过程。经过仔细审查后，有20篇手稿被接受出版。主题涵盖了广泛的领域，包括InP中的毫米波放大器，Si SOI，SiGe，线性化技术，5G功率放大器以及宽带和高功率GaN技术。