This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design.

中文翻译：

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毫米波功率放大器技术与设计技术综述


本文回顾了最先进的毫米波 (mm-wave) 功率放大器 (PA)，重点关注宽带设计技术。概述了主要固态技术，包括硅、砷化镓 (GaAs)、GaN 和其他 III-V 族材料，以及场效应晶体管和双极晶体管。首先介绍最流行的宽带设计技术，然后对科学文献中最相关的设计示例进行批判性比较。鉴于预计利用毫米波频谱的应用范围很广，本文的贡献将为设计人员提供宝贵的指南，帮助他们在完成毫米波 PA 设计的挑战性任务之前需要单一参考。