Performance limits and design techniques for millimeter-wave amplifiers employing switches for multiband operation are presented in this article. A bidirectional dual-band amplifier is designed in a 130-nm silicon–germanium (SiGe) process. The amplifier can shift its operational frequency between 28 or 60 GHz and can operate in low-noise receive or high-power transmit mode. The frequency shift and transmit–receive (T/R) mode change has been realized using shunt switches based on SiGe HBTs. The switches are co-optimized and integrated with amplifiers to reduce the die area and improve performance. An analysis of switch loss reduction and associated tradeoffs is provided. The designed shunt switch, for band-switching operation, achieves the simulated ON-loss of as low as 1 dB at 60 GHz and OFF-loss of 0.7 dB at 28 GHz. By using these low-loss switches and a codesign approach, the proposed T/R amplifier surpasses the state-of-the-art performance in terms of mm-wave multiband amplifiers.

中文翻译：

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用于可重构毫米波收发器的 28-/60-GHz 频带可切换双向放大器

本文介绍了采用开关进行多频段操作的毫米波放大器的性能限制和设计技术。双向双频放大器采用 130 纳米硅锗 (SiGe) 工艺设计。该放大器可在 28 或 60 GHz 之间转换其工作频率，并可在低噪声接收或高功率发射模式下运行。使用基于 SiGe HBT 的分流开关实现了频移和发射 - 接收 (T/R) 模式变化。这些开关经过共同优化并与放大器集成，以减少芯片面积并提高性能。提供了对降低开关损耗和相关权衡的分析。设计用于频带切换操作的分流开关在 60 GHz 下实现了低至 1 dB 的模拟导通损耗和在 28 GHz 下实现了 0.7 dB 的关断损耗。