A novel Microstructure PIN photodiode (MPIN-PD) using the ray-optic theory of light trapping effect is presented and analyzed numerically. The MPIN-PD is proposed from an ordinary large-diameter PIN-PD by introducing an obconical shape surrounded by a V-groove trench. The photon-material interaction is increased by using the microstructure in the PIN-PD. It can control light and cause syntony in the absorption layer, reducing the junction capacitance of the PD, and suppressing the tradeoff between the efficiency and bandwidth. Thus, both 3-dB bandwidth and quantum efficiency can be improved simultaneously. The parameters of the MPIN-PD, including the depth and apex angles of the micro-structure, the distance between the cone and V-groove trench are carefully studied to estimate their positive effects of the performance of the MPIN-PD. The transmission line model is exploited for the specific structure to design the electrodes’ distribution.

中文翻译：

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具有并联微结构的高带宽效率产品 MPIN 光电二极管

提出并数值分析了一种使用光捕获效应的射线光学理论的新型微结构 PIN 光电二极管 (MPIN-PD)。MPIN-PD 是从普通的大直径 PIN-PD 提出来的，引入了一个被 V 形槽包围的倒圆锥形状。通过使用 PIN-PD 中的微结构，增加了光子-材料相互作用。它可以控制光并在吸收层引起谐振，降低PD的结电容，抑制效率和带宽之间的折衷。因此，可以同时提高 3-dB 带宽和量子效率。仔细研究了 MPIN-PD 的参数，包括微结构的深度和顶角、锥体和 V 型槽之间的距离，以估计它们对 MPIN-PD 性能的积极影响。