As an absorber in photovoltaic devices, Sb2Se3 has rapidly achieved impressive power conversion efficiencies despite the lack of fundamental knowledge about its electronic defects. Here, we present a deep level transient spectroscopy (DLTS) study of deep level defects in both bulk crystal and thin film device material. DLTS study of Bridgman-grown n-type bulk crystals revealed traps at 358, 447, 505, and 685 meV below the conduction band edge. Of these, the energetically close pair at 447 and 505 meV could only be resolved using the isothermal transient spectroscopy (rate window variation) method. A completed Sb2Se3 thin film solar cell displayed similar trap spectra with traps identified at 378, 460, and 690 meV. The comparable nature of defects in thin film and bulk crystal material implies that there is minimal impact of polycrystallinity in Sb2Se3 supporting the concept of benign grain boundaries.

中文翻译：

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Sb2Se3薄膜太阳能电池和块状晶体的缺陷特性

尽管缺乏关于其电子缺陷的基本知识，但作为光伏器件中的吸收体，Sb2Se3 已迅速实现了令人印象深刻的功率转换效率。在这里，我们提出了对体晶和薄膜器件材料中深能级缺陷的深能级瞬态光谱 (DLTS) 研究。布里奇曼生长的 n 型块状晶体的 DLTS 研究揭示了在导带边缘以下 358、447、505 和 685 meV 处的陷阱。其中，447 和 505 meV 的能量接近对只能使用等温瞬态光谱（速率窗口变化）方法解析。一个完整的 Sb2Se3 薄膜太阳能电池显示出类似的陷阱光谱，陷阱在 378、460 和 690 meV 处被识别。