We differentiate the effect of strain induced by lattice-mismatched growth from strain induced by mechanical deformation on cubic nonradiative Auger recombination in narrow-gap GaInAsSb/GaSb quantum well (QW) heterostructures. The typical reduction in the Auger coefficient observed with lattice-mismatched growth appears to be due to the concomitant compositional change rather than the addition of strain, with implications for mid-IR semiconductor laser design. We induced a range of internal compressive strain in five samples from −0.90% to −2.07% by varying the composition during the growth and mechanically induced a similar range of internal strain in analogous quantum well membrane samples. We performed time-resolved photoluminescence and differential reflectivity measurements to extract the carrier recombination dynamics, taken at 300 K with carrier densities from 2.7 × 10 18 cm−3 to 1.4 × 10 19 cm−3. We observed no change with strain in the cubic Auger coefficient of samples that were strained mechanically, but we did observe a trend with strain in samples that were strained by the QW alloy composition. Measured Auger coefficients ranged from 3.0 × 1 0 − 29 cm6 s−1 to 3.0 × 1 0 − 28 cm6 s−1.

中文翻译：

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3 μm GaInAsSb/GaSb I 型活性区中俄歇复合的应变依赖性

我们区分了晶格失配生长引起的应变与机械变形引起的应变对窄间隙 GaInAsSb/GaSb 量子阱 (QW) 异质结构中立方非辐射俄歇复合的影响。在晶格失配生长中观察到的俄歇系数的典型降低似乎是由于伴随的成分变化而不是应变的增加，这对中红外半导体激光器设计有影响。我们通过改变生长过程中的成分在五个样品中诱导了从 -0.90% 到 -2.07% 的一系列内部压缩应变，并在类似的量子阱膜样品中机械诱导了类似范围的内部应变。我们进行了时间分辨光致发光和微分反射率测量以提取载流子复合动力学，在 300 K 下拍摄，载流子密度从 2.7 × 10 18 cm−3 到 1.4 × 10 19 cm−3。我们观察到机械应变样品的三次俄歇系数没有随应变发生变化，但我们确实观察到由 QW 合金成分应变的样品的应变趋势。测量的俄歇系数范围从 3.0 × 1 0 − 29 cm6 s−1 到 3.0 × 1 0 − 28 cm6 s−1。