A feasibility study is presented on the performance parameters of a novel on-chip antenna based on metasurface technology at terahertz band. The proposed metasurface on-chip antenna is constructed on an electrically thin high-permittivity gallium arsenide (GaAs) substrate layer. Metasurface is implemented by engraving slot-lines on an array of 11 × 11 circular patches fabricated on the top layer of the GaAs substrate and metallic via-holes implemented in the central patch of each row constituting the array, which connects the patch to the leaky-wave open-ended feeding slot-lines running underneath the patches. The slot-lines are connected to each other with a slit. A waveguide port is used to excite the array via slot-lines that couple the electromagnetic energy to the patches. The metasurface on-chip antenna is shown to exhibit an average measured gain in excess of 10 dBi and radiation efficiency above 60% over a wide frequency range from 0.41 to 0.47 THz, which is significant development over other on-chip antenna techniques reported to date. Dimensions of the antenna are 8.6 × 8.6 × 0.0503 mm³. The results show that the proposed GaAs-based metasurface on-chip antenna is viable for applications in terahertz integrated circuits.

提出了一种基于超表面技术在太赫兹频段上的新型片上天线性能参数的可行性研究。所提出的超表面芯片上天线构建在电薄的高介电常数砷化镓（GaAs）衬底层上。通过在GaAs衬底的顶层上制造的11×11圆形贴片阵列上刻槽线和在构成阵列的每一行的中央贴片中实现的金属通孔上刻槽线，金属通孔将贴片连接到漏孔，从而实现超颖表面-在贴片下方延伸的开放式喂食槽线。缝隙线通过狭缝彼此连接。波导端口用于通过缝隙线激励阵列，缝隙线将电磁能耦合到贴片。示出了超表面片上天线在0.41至0.47 THz的宽频率范围内显示出超过10 dBi的平均测量增益和60％以上的辐射效率，这是迄今为止迄今为止报道的其他片上天线技术的重大发展。天线尺寸为8.6×8.6×0.0503毫米³。结果表明，所提出的基于GaAs的超表面片上天线对于太赫兹集成电路中的应用是可行的。