As superconducting qubit circuits become more complex, addressing a large array of qubits becomes a challenging engineering problem. Dense arrays of qubits benefit from, and may require, access via the third dimension to alleviate interconnect crowding. Through-silicon vias (TSVs) represent a promising approach to three-dimensional (3D) integration in superconducting qubit arrays—provided they are compact enough to support densely-packed qubit systems without compromising qubit performance or low-loss signal and control routing. In this work, we demonstrate the integration of superconducting, high-aspect ratio TSVs—10 μm wide by 20 μm long by 200 μm deep—with superconducting qubits. We utilize TSVs for baseband control and high-fidelity microwave readout of qubits using a two-chip, bump-bonded architecture. We also validate the fabrication of qubits directly upon the surface of a TSV-integrated chip. These key 3D-integration milestones pave the way for the control and readout of high-density superconducting qubit arrays using superconducting TSVs.

随着超导量子位电路变得越来越复杂，解决大量量子位成为一个具有挑战性的工程问题。量子位的密集阵列受益于并且可能需要通过三维访问，以减轻互连拥挤。硅通孔（TSV）代表了超导量子位阵列中三维（3D）集成的一种有前途的方法-前提是它们足够紧凑以支持密集封装的量子位系统，而不会影响量子位性能或低损耗信号和控制路由。在这项工作中，我们演示了超导，高长宽比的TSV（宽10μm，长20μm，深200μm）与超导量子位的集成。我们使用TSV进行基带控制，并使用两芯片凸点键合架构对量子位进行高保真微波读取。我们还直接在集成了TSV的芯片表面上验证了量子位的制造。这些关键的3D集成里程碑为使用超导TSV控制和读出高密度超导qubit阵列铺平了道路。