Anomalous Hall Effect and Magnetoresistance in Sputter‐Deposited Magnetic Weyl Semimetal Co2TiGe Thin Films,Physica Status Solidi (B) - Basic Solid State Physics

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Anomalous Hall Effect and Magnetoresistance in Sputter‐Deposited Magnetic Weyl Semimetal Co2TiGe Thin Films
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-07-03 , DOI: 10.1002/pssb.202000067
Denis Dyck ₁ , Andreas Becker ₁ , Jungwoo Koo ₁ , Tristan Matalla-Wagner ₁ , Jan Krieft ₁ , Günter Reiss ₁

Affiliation

Herein, sputter‐deposited ferromagnetic Weyl semimetal (WSM) and full‐Heusler compound Co₂TiGe is investigated. Crystal quality is analyzed using X‐ray diffraction and reflectivity. In addition, temperature‐dependent transport and magnetization measurements are carried out. The sample shows indications on the formation of L2₁ crystal structure. Magnetization measurements show a saturation magnetization of 1.98 μ_B (f.u.)⁻¹ and 1.45 μ_B (f.u.)⁻¹ at 50 and 300 K, respectively. This is in close agreement to the calculated value of 2 μ_B (f.u.)⁻¹ at 0 K using the Slater–Pauling rule. The obtained Curie temperature is 378.5 K, which is close to prior results for bulk samples. The residual resistivity of 142.7 μΩ cm is mainly dominated by disorder scattering. At temperatures above 60 K, the Coulomb interaction dominates the resistance. The residual resistance ratio is around 1.49. Hall measurements show positive ordinary Hall and anomalous Hall constants and a positive dependence on temperature. Skew scattering and side jumps or intrinsic mechanisms contribute in similar amounts to the anomalous Hall resistivity, which indicates a higher than usual intrinsic contribution, which is expected for WSMs. The expected relation between the longitudinal and the anomalous Hall conductivity of

σ_{xy}^{A} \propto σ_{xx}^{0}

is not met.

中文翻译：

溅射沉积磁Weyl半金属Co2TiGe薄膜的异常霍尔效应和磁阻

本文研究了溅射沉积的铁磁Weyl半金属（WSM）和全Heusler化合物Co ₂ TiGe。使用X射线衍射和反射率分析晶体质量。此外，还进行了取决于温度的传输和磁化强度测量。样品显示出有关L2 ₁晶体结构形成的迹象。磁化测量显示1.98μ的饱和磁化_乙（FU）^-1和1.45μ_乙（FU）^-1分别在50和300 K，。这是在到的2μ的计算值接近一致_乙（FU）^-1使用Slater-Pauling规则在0 K时。所获得的居里温度为378.5 K，与批量样品的先前结果相近。142.7μΩcm的剩余电阻率主要受无序散射支配。在高于60 K的温度下，库仑相互作用决定了电阻。剩余电阻比约为1.49。霍尔测量结果显示正霍尔常数和反常霍尔常数以及对温度的正相关性。偏斜散射和侧跳或内在机制对霍尔电阻率异常的贡献相似，这表明比平时的WSM固有的内在贡献更高。纵向和反常霍尔电导率之间的预期关系

σ_{y}^{一种} \propto σ_{xx}^{0}

不符合。

更新日期：2020-07-03

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