Informative Aspects of Molten KOH Etch Pits Formed at Basal Plane Dislocations on the Surface of 4H‐SiC,Physica Status Solidi (A) - Applications and Materials Science

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Informative Aspects of Molten KOH Etch Pits Formed at Basal Plane Dislocations on the Surface of 4H‐SiC
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-07-02 , DOI: 10.1002/pssa.202000332
Johji Nishio ₁ , Chiharu Ota ₁ , Aoi Okada ₁ , Ryosuke Iijima ₁

Affiliation

Despite being a destructive technique, molten KOH etch pits at basal plane dislocations are found to have informative aspects, as revealed by photoluminescence imaging and optical microscopy, on the 4° off‐cut (0001) surface of 4H‐SiC p–i–n diode chips, where single Shockley‐type stacking faults have expanded during electroluminescence experiments. Smaller etch pits are observed aligning on single lines along ±[

\bar{1}

100] that are the shallowest sides of stacking faults. Through closer observation of the pits, the facing directions are found to agree well with a model explaining the two types of partial dislocations constituting the line. Other basal plane dislocation pits are observed by scanning electron microscopy on the sublimation‐grown wafer surface before epitaxial growth. The distances between the partial dislocation cores are measured at each pit. No basal plane dislocation etch pit facing toward ±[

\bar{1}

100] is found, but a weak correlation is noted between the partial dislocation distance at the cores and the direction that the basal plane dislocations face. The corresponding results are discussed in terms of the image force and the force exerted on steps perpendicular to the (0001) plane, to understand the mechanisms of basal plane dislocation propagation and/or conversion to threading edge dislocations.

中文翻译：

4H-SiC表面基底平面位错上形成的熔融KOH蚀刻坑的信息性方面

尽管是一种破坏性技术，但发现基面位错处的熔融KOH蚀刻坑在4H‐SiC p–i–n的4°切角（0001）表面上具有有益的方面，如光致发光成像和光学显微镜所揭示的那样。二极管芯片，其中单个Shockley型堆叠故障在电致发光实验中已经扩大。观察到较小的蚀刻坑沿±[