Design of a reversible structure for memory in quantum‐dot cellular automata,International Journal of Circuit Theory and Applications

当前位置： X-MOL 学术 › Int. J. Circ. Theory Appl. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Design of a reversible structure for memory in quantum‐dot cellular automata
International Journal of Circuit Theory and Applications ( IF 1.8 ) Pub Date : 2020-07-03 , DOI: 10.1002/cta.2807
Fereshteh Salimzadeh ₁ , Saeed Rasouli Heikalabad ₂ , Farhad Soleimanian Gharehchopogh ₁

Affiliation

Complementary metal oxide semiconductor (CMOS) technology has limitations in reducing the area and size of circuits. The disadvantages of this technology include high power consumption and temperature problems. Quantum‐dot cellular automata (QCA) is a new technology that can overcome these shortcomings. Reversible logic is technology used to reduce the power loss in QCA. QCA can be used to design memories that require high operating speed. In this paper, we propose a structure for the reversible memory in QCA. The proposed structure utilizes three‐layer technology, which has a significant impact on circuit size reduction. The proposed structure for the reversible memory has 63% improvement in cell number, a 75% improvement in area occupancy, and a 60% reduction in delay compared to the previous best structure.

中文翻译：

量子点细胞自动机中记忆的可逆结构设计

互补金属氧化物半导体（CMOS）技术在减小电路的面积和尺寸方面有局限性。该技术的缺点包括高功耗和温度问题。量子点自动机（QCA）是可以克服这些缺点的新技术。可逆逻辑是用于减少QCA中功耗的技术。QCA可用于设计要求高操作速度的存储器。在本文中，我们提出了QCA中可逆存储器的结构。所提出的结构利用了三层技术，这对减小电路尺寸具有重大影响。与以前的最佳结构相比，可逆存储器的拟议结构在单元数方面提高了63％，在面积占用方面提高了75％，在延迟方面降低了60％。

更新日期：2020-07-03

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11