Abstract The possibilities of employing InAs sub-mono layer (SML) quantum dots (QD) as long wavelength sources and infrared photodetectors have been explored in this work. To accomplish this, various heterostructures based on InAs SML QDs capped with GaAs1-xSbx were studied. The effects of Sb accumulation on the top of QDs were explored and their influences on the optical properties were duly explained. Two opposing phenomena, viz. Reduction in conduction band offset and increase in hydrostatic strain, with higher concentration of Sb accumulation were observed. This had a net effect of red-shift in the photoluminescence emission. In addition, the number of QD layers was varied from 2 to 8 layers. The SML QD structure with optimum number of layers facilitated photoluminescence wavelength close to 1300 nm, which is suitable for telecommunication applications. In addition, the possibilities of these SML QDs to be used as photodetectors in the long wavelength infrared (LWIR) and far infrared (FIR) regions have been portrayed.

中文翻译：

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Sb 积累对 InAs/GaAs1-x Sbx 亚单层 (SML) 量子点异质结构的带间和子带间跃迁的影响

摘要 在这项工作中已经探索了使用 InAs 亚单层 (SML) 量子点 (QD) 作为长波长源和红外光电探测器的可能性。为了实现这一点，研究了基于用 GaAs1-xSbx 封盖的 InAs SML QD 的各种异质结构。探讨了 Sb 积累对 QD 顶部的影响，并适当解释了它们对光学性质的影响。两种相反的现象，即。观察到导带偏移的减少和流体静力应变的增加，以及更高浓度的 Sb 积累。这具有光致发光发射红移的净效应。此外，QD 层数从 2 层到 8 层不等。具有最佳层数的 SML QD 结构促进了接近 1300 nm 的光致发光波长，适用于电信应用。此外，还描绘了这些 SML QD 在长波长红外 (LWIR) 和远红外 (FIR) 区域用作光电探测器的可能性。