All inorganic perovskite quantum dots (PeQDs) of CsPbX₃ (X = Cl, Br, I, or their mixture) are regarded as promising candidates for photovoltaics and optoelectronic devices owing to their excellent and unique optical and electronic properties. However, their inherent poor stability severely limits their practical applications. Herein, aiming at improving their stability and photoluminescence (PL) properties, a novel surface capping ligand strategy was performed via directly synthesizing CsPbX₃ quantum dots (QDs) by hot injection method with straight-chain n-alkylmonoamine instead of conventional organic amine (oleylamine) as ligands. With stronger intermolecular interaction and denser alignment, n-alkylmonoamine ligands would form a stable protective layer on the surface of PeQDs. As a result, the n-alkylmonoamine capped CsPbBr₃ QDs exhibited remarkable long-term storage with 70% of PLQY retaining after 30 days in the open air, impressive water resistance for over 1 h in water, significant photostability with hour-scale laser exposure, and high thermal stability with 60% of PLQY retaining after heating at 80 °C for over 60 min. In addition, by blending the CsPbBr₃ QDs with polymer as the gate dielectric, novel light-erasable transistor memories were fabricated based on the device architecture of a floating-gate transistor memory (FGOTM). Acting as dense charge tunneling layers for charge trapping materials (PeQDs) in light-erasable transistor memory, the alkylmonoamine ligand layers led to significant broadening of memory windows, presenting various charge capture abilities of the PeQDs with the different capping ligands.

CsPbX _3的所有无机钙钛矿量子点（PeQDs）（X = Cl，Br，I或它们的混合物），由于其优异而独特的光学和电子特性，被认为是光伏和光电器件的有希望的候选者。但是，它们固有的差的稳定性严重限制了它们的实际应用。在此，为了改善其稳定性和光致发光（PL）性能，通过直接合成CsPbX ₃进行了新颖的表面封盖配体策略量子点（QDs）通过热注射法，用直链正烷基单胺代替传统的有机胺（油胺）作为配体。具有更强的分子间相互作用和更紧密的排列，正烷基单胺配体将在PeQD的表面上形成稳定的保护层。结果，正烷基单胺封端的CsPbBr ₃ QD在露天放置30天后表现出出色的长期存储能力，其中70％的PLQY保留，在水中超过1小时的耐水性能令人印象深刻，并且在小时刻度的激光照射下具有显着的光稳定性。 ，并具有很高的热稳定性，在80°C加热60分钟后仍保留60％的PLQY。另外，通过掺合CsPbBr ₃以聚合物为栅极电介质的量子点，基于浮栅晶体管存储器（FGOTM）的器件架构，制造了新型的光可擦除晶体管存储器。烷基单胺配体层充当光可擦除晶体管存储器中电荷捕获材料（PeQD）的致密电荷隧穿层，导致存储器窗口显着拓宽，从而呈现出具有不同封端配体的PeQD的各种电荷捕获能力。