Abstract Hard diamond-like carbon (DLC) films were prepared by a double-pulse high-power impulse magnetron sputtering (HiPIMS) at an Ar gas pressure of 0.6 Pa and average power of 90 W. The objective was to increase the sp3 C content in the films, in comparison to single-pulse HiPIMS. The first HiPIMS plasma temporally evolved during a pulse-on time of the voltage source with a width of about 15 μs and the discharge current reached 50 A corresponding to 1.8 A/cm2. After the application of the first-pulse voltage for HiPIMS, a second-pulse voltage was applied to produce the second HiPIMS from the afterglow plasma. External setting parameters such as the time interval between the first pulse and second pulse and the target current in the second HiPIMS were varied. The fraction of sp3 C–C bonds was estimated from the ratio of the peak intensity related to sp3 C–C bonds to the total peak intensity of C1s core spectrum in X-ray photoelectron spectroscopy. The fraction of sp3 C–C bonds in the DLC film prepared by double-pulse HiPIMS reached 52% with a hardness of 36.5 GPa.

中文翻译：

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双脉冲高功率脉冲磁控溅射法合成硬质类金刚石碳膜

摘要 采用双脉冲高功率脉冲磁控溅射 (HiPIMS) 在 Ar 气压为 0.6 Pa、平均功率为 90 W 的条件下制备硬质类金刚石碳 (DLC) 薄膜。在电影中，与单脉冲 HiPIMS 相比。第一个 HiPIMS 等离子体在电压源的脉冲导通时间内随时间演化，宽度约为 15 μs，放电电流达到 50 A，对应于 1.8 A/cm2。在为 HiPIMS 施加第一脉冲电压后，施加第二脉冲电压以从余辉等离子体产生第二个 HiPIMS。外部设置参数，例如第一次脉冲和第二次脉冲之间的时间间隔以及第二个 HiPIMS 中的目标电流是变化的。sp3 C-C 键的分数是根据与 sp3 C-C 键相关的峰值强度与 X 射线光电子能谱中 C1s 核心光谱的总峰值强度的比率来估计的。双脉冲HiPIMS制备的DLC薄膜中sp3 C-C键的比例达到52%，硬度为36.5 GPa。