Abstract

In this work solution processed novel poly-triarylamine (PTAA) organic p-type active layer on inorganic n-ZnO device transparency and electrical properties are investigated under illumination. Low cost organic–inorganic transparent hybrid hetero-junction (HHJ) is a promising candidate for next-generation photovoltaic applications. Greater band gap organic material window layer while inorganic material’s higher thermal stability as HHJ is suitable for detection and photovoltaic applications. However, hetero-interface defects associated leakage current is the key issue of undermining large-area device electrical performance. Hetero-interface defect associated carriers optical absorption limits transparency whereas leakage current density is reliant on physical property and band barrier effect. It is demanded to investigate hetero-device physical stuff and band barrier effect on electrical properties. Novel PTAA is deposited on RF-sputtered inorganic n-ZnO/ITO/glass substrate by spin-coating method. 100 and 60 nm PTAA thin films are deposited with 1000 and 2000 revolution per minute (rpm) growth sequence, respectively. PTAA as a transparent p-emitter is shown to absorb incident light beyond visible band, thereby it has promoted excitonic effect. Device I–V characterization carried out at different annealing temperatures and applied voltage. Suitable annealing condition leakage current is shown to reduce nearly 10⁻⁴ A/cm² and at higher applied field the greater rectifying I(+)/I(−) ratio is realized. Grain size is shown to increase with annealing effect however; leakage current is remained almost independent of grain size.

Graphic Abstract

中文翻译：

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固溶PTAA-ZnO透明混合杂结器件的低漏电流

摘要

在这项工作中，在无机n-ZnO器件上经过溶液处理的新型聚三芳基胺（PTAA）有机p型活性层在照明下研究了透明性和电性能。低成本的有机-无机透明混合异质结（HHJ）是下一代光伏应用的有希望的候选者。带隙较大的有机材料窗口层，而无机材料作为HHJ的热稳定性更高，适用于检测和光伏应用。然而，与漏电流相关的异质界面缺陷是破坏大面积器件电性能的关键问题。与异质界面缺陷相关的载流子的光吸收限制了透明性，而泄漏电流密度则取决于物理性质和带阻效应。需要研究异质器件的物理填充和带隙对电性能的影响。通过旋涂法将新型PTAA沉积在RF溅射的无机n-ZnO / ITO /玻璃基板上。分别以每分钟1000转和2000转（rpm）的生长顺序沉积100和60 nm的PTAA薄膜。PTAA作为透明的p型发射极，显示出吸收可见光波段以外的入射光，从而促进了激子效应。在不同的退火温度和施加的电压下进行器件IV表征。合适的退火条件下的泄漏电流显示减少了近10 分别以每分钟1000转和2000转（rpm）的生长顺序沉积100和60 nm的PTAA薄膜。PTAA作为透明的p型发射极，显示出吸收可见光波段以外的入射光，从而促进了激子效应。在不同的退火温度和施加的电压下进行器件IV表征。合适的退火条件下的泄漏电流显示减少了近10 分别以每分钟1000转和2000转（rpm）的生长顺序沉积100和60 nm的PTAA薄膜。PTAA作为透明的p型发射极，显示出吸收可见光波段以外的入射光，从而促进了激子效应。在不同的退火温度和施加的电压下进行器件IV表征。合适的退火条件下的泄漏电流显示减少了近10^-4  A / cm ^2，并且在较高的施加电场下，可以实现更大的整流I（+）/ I（-）比。晶粒尺寸随着退火效果的增加而增加。漏电流几乎保持与晶粒尺寸无关。

图形摘要