AlGaN solar-blind ultraviolet detectors have great potential in many fields, although their performance has not fully meet the requirements until now. Here, we proposed an approach to utilize the inherent polarization effect of AlGaN to improve the detector performance. AlGaN heterostructures were designed to enhance the polarization field in the absorption layer, and a high built-in field and a high electron mobility conduction channel were formed. As a result, a high-performance solar-blind ultraviolet detector with a peak responsivity of 1.42 A/W at 10 V was achieved, being 50 times higher than that of the nonpolarization-enhanced one. Moreover, an electron reservoir structure was proposed to further improve the performance. A higher peak responsivity of 3.1 A/W at 30 V was achieved because the electron reservoir structure could modulate the electron concentration in the conduction channel. The investigation presented here provided feasible approaches to improve the performance of the AlGaN detector by taking advantage of its inherent property.

中文翻译：

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偏振增强型 AlGaN 日盲紫外线探测器

AlGaN日盲紫外探测器在许多领域具有巨大的潜力，但其性能直到现在还不能完全满足要求。在这里，我们提出了一种利用 AlGaN 固有的极化效应来提高探测器性能的方法。设计AlGaN异质结构以增强吸收层中的极化场，形成高内建场和高电子迁移率传导通道。结果，实现了在 10 V 下峰值响应率为 1.42 A/W 的高性能日盲紫外检测器，比非偏振增强型检测器高 50 倍。此外，还提出了一种电子储层结构以进一步提高性能。更高的峰值响应度 3。在 30 V 下实现了 1 A/W，因为电子储存器结构可以调节传导通道中的电子浓度。这里介绍的研究提供了可行的方法，通过利用其固有特性来提高 AlGaN 探测器的性能。