Abstract The 4H SiliconCarbide metal semiconductor field effect transistor (4H-SiC MESFET) with a buffer layer between the gate and channel (BG) is optimized and a new stair-stepping buffer-gate structure (SBG) is proposed for improving the breakdown characteristics. The terminal technology of breakdown point transfer (BPT) is applied in 4H-SiC SBG-MESFET in order to scatter the electric field lines and transfer the breakdown point. The breakdown mechanism is further investigated by simulating the surface electric field distribution and electrostatic potential contours. The results show that the breakdown voltage is increased from 120 V to 180 V, improved by the rate of 50% while the current density has hardly deteriorated, and thus the current density is improved from 9.35 W/mm to 13.2 W/mm in comparison with BG structure.

中文翻译：

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阶梯式缓冲栅 4H 碳化硅金属半导体场效应晶体管的改进性能

摘要 优化了在栅极和沟道 (BG) 之间具有缓冲层的 4H 碳化硅金属半导体场效应晶体管 (4H-SiC MESFET)，并提出了一种新的阶梯缓冲栅极结构 (SBG) 以提高击穿特性。4H-SiC SBG-MESFET采用了击穿点转移（BPT）终端技术，以分散电场线，转移击穿点。通过模拟表面电场分布和静电势等高线进一步研究击穿机制。结果表明，击穿电压从120 V提高到180 V，提高了50%，而电流密度几乎没有下降，相比之下，电流密度从9.35 W/mm提高到13.2 W/mm BG结构。