Abstract Al doped and Cu doped ZnO NRAs/Graphene composite material are synthesized by introducing the concentrations of 0%, 2%, 4%, 6%, 8% using hydrothermal method, and their structure and morphology are characterized by XRD, EDS and SEM, XPS. The results show that Al:6% doped and Cu:4% doped ZnO/Graphene nanorod array have the best crystal quality and morphology compared to other concentrations of doped samples. Other than that, the field emission performances of Al:6% doped and Cu:4% doped ZnO NRAs/Graphene are measured. The turn-on field and field enhancement factor of Al:6% doped ZnO NRAs/Graphene are 1.51 V/mm and 11264. The turn-on field and field enhancement factor of Cu:4% doped ZnO NRAs/Graphene are 1.80 V/mm and 10076. It is found that the field emission performance of Al: 6% doped ZnO NRAs/Graphene is higher than the sample with doped Cu, which indicating that Al-doped ZnO NRAs/Graphene might have promising applications for various field emission devices.

中文翻译：

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金属掺杂ZnO NRAs/石墨烯复合材料的制备及场发射性能

摘要 采用水热法引入 0%、2%、4%、6%、8% 的浓度合成了 Al 和 Cu 掺杂的 ZnO NRAs/石墨烯复合材料，并通过 XRD、EDS 和 SEM 对其结构和形貌进行了表征。 ，XPS。结果表明，与其他掺杂浓度的样品相比，Al:6% 掺杂和 Cu:4% 掺杂的 ZnO/石墨烯纳米棒阵列具有最佳的晶体质量和形貌。除此之外，还测量了 Al:6% 掺杂和 Cu:4% 掺杂的 ZnO NRAs/石墨烯的场发射性能。Al:6% 掺杂 ZnO NRAs/Graphene 的开启场和场增强因子为 1.51 V/mm 和 11264。Cu:4% 掺杂 ZnO NRAs/Graphene 的开启场和场增强因子为 1.80 V/mm mm 和 10076。发现 Al 的场发射性能：