Abstract The purpose of this work is to study the effect of rapid thermal annealing (RTA) with halogen lamps on the structural and phase characteristics of lead zirconate-titanate (PZT) films. The PZT thin films with a thickness of 1.0 ± 0.1 μm were deposited by high-frequency reactive plasma sputtering in an oxygen atmosphere on oxidized silicon and silicon substrates with orientation (100). After deposition, the PZT films subjected to RTA at temperatures of 500 °C, 600 °C and 700 °C at a rate of 60 °C/s. The structural-phase composition of PZT films was determined with X-ray diffraction analysis. Studies of heterostructures with scanning electron microscopy methods have shown that increase in the temperature of the RTA leads to a qualitative change in the structural-phase state of the PZT film as compared to its initial state. This makes it possible effectively using of RTA in the formation of PZT films with specified parameters.

中文翻译：

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快速热退火对锆钛酸铅薄膜结构性能影响的研究

摘要 本工作的目的是研究卤素灯快速热退火 (RTA) 对锆钛酸铅 (PZT) 薄膜结构和相位特性的影响。厚度为 1.0 ± 0.1 μm 的 PZT 薄膜通过高频反应等离子体溅射在氧气氛中沉积在氧化硅和取向 (100) 的硅衬底上。沉积后，PZT 薄膜在 500°C、600°C 和 700°C 的温度下以 60°C/s 的速率经受 RTA。PZT 薄膜的结构相组成通过 X 射线衍射分析确定。使用扫描电子显微镜方法对异质结构的研究表明，与初始状态相比，RTA 温度的升高导致 PZT 膜的结构相状态发生质的变化。