Defect-enhanced energy storage Dielectric capacitors are vital components of electronics and power systems. The thin-film materials of which capacitors are composed are usually optimized by changing the material composition. However, Kim et al. found that postprocessing an already effective thin-film dielectric by high-energy ion bombardment further improved the material because of the introduction of specific types of defects that ultimately improved the energy storage performance. The results suggest that postprocessing may be important for developing the next generation of capacitors. Science, this issue p. 81 High-energy ion bombardment considerably improves the dielectric properties of a relaxor ferroelectric thin film. Dielectric capacitors can store and release electric energy at ultrafast rates and are extensively studied for applications in electronics and electric power systems. Among various candidates, thin films based on relaxor ferroelectrics, a special kind of ferroelectric with nanometer-sized domains, have attracted special attention because of their high energy densities and efficiencies. We show that high-energy ion bombardment improves the energy storage performance of relaxor ferroelectric thin films. Intrinsic point defects created by ion bombardment reduce leakage, delay low-field polarization saturation, enhance high-field polarizability, and improve breakdown strength. We demonstrate energy storage densities as high as ~133 joules per cubic centimeter with efficiencies exceeding 75%. Deterministic control of defects by means of postsynthesis processing methods such as ion bombardment can be used to overcome the trade-off between high polarizability and breakdown strength.

中文翻译：

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离子轰击弛豫铁电薄膜中的超高电容能量密度

缺陷增强型储能介质电容器是电子和电力系统的重要组成部分。构成电容器的薄膜材料通常通过改变材料成分来优化。然而，金等人。发现通过高能离子轰击对已经有效的薄膜电介质进行后处理进一步改进了材料，因为引入了特定类型的缺陷，最终提高了储能性能。结果表明后处理对于开发下一代电容器可能很重要。科学，这个问题 p。81 高能离子轰击大大提高了弛豫铁电薄膜的介电性能。介电电容器可以以超快的速度储存和释放电能，并且在电子和电力系统中的应用得到了广泛的研究。在各种候选材料中，基于弛豫铁电体的薄膜，一种具有纳米尺寸域的特殊铁电体，因其高能量密度和效率而受到特别关注。我们表明高能离子轰击提高了弛豫铁电薄膜的储能性能。离子轰击产生的本征点缺陷可减少泄漏、延迟低场极化饱和、增强高场极化率并提高击穿强度。我们展示了高达每立方厘米约 133 焦耳的能量存储密度，效率超过 75%。