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The Splitting of Electron States in Ge/Si Heterostructure with Germanium Quantum Dots
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-07-02 , DOI: 10.1002/pssb.202000221 Sergey I. Pokutnyi 1
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-07-02 , DOI: 10.1002/pssb.202000221 Sergey I. Pokutnyi 1
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It is shown that electron tunneling through a potential barrier that separates two quantum dots (QDs) of germanium leads to the splitting of electron states localized over spherical interfaces (QD–silicon matrix). The dependence of the splitting values of the electron levels on the parameters of the nanosystem (the radius a of germanium QDs, as well as the distance D between the surfaces of the QDs) is obtained. It is shown that, the splitting of electron levels in the QD chain of germanium causes the appearance of a zone of localized electron states, which is located in the bandgap of silicon matrix. It is found that the motion of a charge‐transport exciton along a chain of QDs of germanium causes an increase in photoconductivity in the nanosystem.
中文翻译：
锗量子点在Ge / Si异质结构中电子态的分裂
结果表明，电子穿过势垒将锗的两个量子点（QD）分开，从而导致球形界面（QD-硅矩阵）上的电子态分裂。获得了电子能级的分裂值对纳米系统参数（锗QDs的半径a以及QDs表面之间的距离D）的依赖性。结果表明，锗的QD链中电子能级的分裂导致出现局部电子态的区域，该区域位于硅基质的带隙中。已经发现，电荷传输激子沿锗的QD链的运动会导致纳米系统中光电导性的增加。
更新日期：2020-09-10
中文翻译：
锗量子点在Ge / Si异质结构中电子态的分裂
结果表明，电子穿过势垒将锗的两个量子点（QD）分开，从而导致球形界面（QD-硅矩阵）上的电子态分裂。获得了电子能级的分裂值对纳米系统参数（锗QDs的半径a以及QDs表面之间的距离D）的依赖性。结果表明，锗的QD链中电子能级的分裂导致出现局部电子态的区域，该区域位于硅基质的带隙中。已经发现，电荷传输激子沿锗的QD链的运动会导致纳米系统中光电导性的增加。
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