High‐Performance Broadband Tungsten Disulfide Photodetector Decorated with Indium Arsenide Nanoislands,Physica Status Solidi (A) - Applications and Materials Science

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High‐Performance Broadband Tungsten Disulfide Photodetector Decorated with Indium Arsenide Nanoislands
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-07-02 , DOI: 10.1002/pssa.202000297
Yuekun Yang _{1,

2} , Guanyu Liu _{1,

2} , Panlin Li _{1,

2} , Miao Zhang ₁ , Jianlu Wang ₃ , Weida Hu ₃ , Zhongying Xue ₁ , Zengfeng Di _{1,

2}

Affiliation

The 2D tungsten disulfide (WS₂), as a typical transition metal dichalcogenide (TMD), has aroused intense research interests in photodetection. However, the limited detection wavelength ranges and low photoresponsivity hinder its further application. To promote the application of WS₂ in optoelectronics fields, indium arsenide (InAs) nanoislands decorated WS₂ are utilized to fabricate photodetectors in this work. Owing to the photogating effect and localized surface plasmon resonance (LSPR), a significant enhancement of photocurrent response (≈1 mA W⁻¹) is obtained by coupling WS₂ with InAs nanoislands. Furthermore, the extended detection wavelength up to 1060 nm is realized due to the efficient light absorption in IR range of InAs nanoislands. The high performance, stability, and reliability in ambient temperature strongly indicate that the InAs nanoislands/WS₂ heterostructure can be considered as a promising material for TMDs‐based broadband optoelectronic devices in the future.

中文翻译：

砷化铟纳米岛装饰的高性能宽带二硫化钨光电探测器

二维二硫化钨（WS ₂）作为一种典型的过渡金属二卤化钨（TMD），引起了光检测领域的强烈研究兴趣。然而，有限的检测波长范围和低的光响应性阻碍了其进一步的应用。为了促进WS ₂在光电子领域的应用，在这项工作中，使用装饰有WS _2的砷化铟（InAs）纳米岛来制造光电探测器。由于光闸效应和局部表面等离子体激元共振（LSPR），通过耦合WS ₂可显着增强光电流响应（≈1mA W ^-1）InAs纳米岛。此外，由于InAs纳米岛在IR范围内的有效光吸收，可实现高达1060 nm的扩展检测波长。在环境温度下的高性能，稳定性和可靠性强烈表明，InAs纳米岛/ WS ₂异质结构可以被认为是未来基于TMD的宽带光电器件的有前途的材料。

更新日期：2020-09-08

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