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Device Postannealing Enabling over 12% Efficient Solution-Processed Cu2 ZnSnS4 Solar Cells with Cd2+ Substitution.
Advanced Materials ( IF 27.4 ) Pub Date : 2020-07-01 , DOI: 10.1002/adma.202000121 Zhenghua Su 1 , Guangxing Liang 1 , Ping Fan 1 , Jingting Luo 1 , Zhuanghao Zheng 1 , Zhigao Xie 1 , Wei Wang 1 , Shuo Chen 1 , Juguang Hu 1 , Yadong Wei 1 , Chang Yan 2 , Jialiang Huang 2 , Xiaojing Hao 2 , Fangyang Liu 3
Advanced Materials ( IF 27.4 ) Pub Date : 2020-07-01 , DOI: 10.1002/adma.202000121 Zhenghua Su 1 , Guangxing Liang 1 , Ping Fan 1 , Jingting Luo 1 , Zhuanghao Zheng 1 , Zhigao Xie 1 , Wei Wang 1 , Shuo Chen 1 , Juguang Hu 1 , Yadong Wei 1 , Chang Yan 2 , Jialiang Huang 2 , Xiaojing Hao 2 , Fangyang Liu 3
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Kesterite Cu2ZnSnS4 is a promising photovoltaic material containing low‐cost, earth‐abundant, and stable semiconductor elements. However, the highest power conversion efficiency of thin‐film solar cells based on Cu2ZnSnS4 is only about 11% due to low open‐circuit voltage and fill factor mainly caused by antisite defects and unfavorable heterojunction interface. In this work, a postannealing procedure is proposed to complete a Cd‐alloyed Cu2ZnSnS4 device. The postannealing to complete the device significantly enhances the performance of the indium tin oxide and promotes the moderate interdiffusion of elements between the layers in the device. As a result of the diffusion of Cu, Zn, In, and Sn, the interfacial electron and hole densities are improved, leading to the achievement of a suitable band alignment for carrier transport. The postannealing also reduces the interface traps and deep‐level defects, contributing to decreased nonradiative recombination. Therefore, the open‐circuit voltage and fill factor are both improved, and an efficiency over 12% for pure sulfide‐based kesterite thin‐film solar cells is obtained.
中文翻译：
器件后退火技术可实现采用Cd2 +替代的超过12％的高效溶液处理的Cu2 ZnSnS4太阳能电池。
Kesterite Cu 2 ZnSnS 4是一种有前途的光伏材料，包含低成本，富含地球的稳定半导体元素。然而，由于低开路电压和主要由反位缺陷和不利的异质结界面引起的填充因子，基于Cu 2 ZnSnS 4的薄膜太阳能电池的最高功率转换效率仅为11％左右。在这项工作中，提出了一种后退火程序来完成Cd合金化的Cu 2 ZnSnS 4设备。后退火以完成器件，大大提高了铟锡氧化物的性能，并促进了器件中各层之间元素的适度相互扩散。由于Cu，Zn，In和Sn的扩散，界面电子和空穴密度得到了改善，从而实现了适合载流子传输的能带对准。后退火还减少了界面陷阱和深层缺陷，有助于减少非辐射复合。因此，开路电压和填充因数都得到了改善，纯硫化物基钾长石薄膜太阳能电池的效率超过12％。
更新日期：2020-08-11
中文翻译：
器件后退火技术可实现采用Cd2 +替代的超过12％的高效溶液处理的Cu2 ZnSnS4太阳能电池。
Kesterite Cu 2 ZnSnS 4是一种有前途的光伏材料，包含低成本，富含地球的稳定半导体元素。然而，由于低开路电压和主要由反位缺陷和不利的异质结界面引起的填充因子，基于Cu 2 ZnSnS 4的薄膜太阳能电池的最高功率转换效率仅为11％左右。在这项工作中，提出了一种后退火程序来完成Cd合金化的Cu 2 ZnSnS 4设备。后退火以完成器件，大大提高了铟锡氧化物的性能，并促进了器件中各层之间元素的适度相互扩散。由于Cu，Zn，In和Sn的扩散，界面电子和空穴密度得到了改善，从而实现了适合载流子传输的能带对准。后退火还减少了界面陷阱和深层缺陷，有助于减少非辐射复合。因此，开路电压和填充因数都得到了改善，纯硫化物基钾长石薄膜太阳能电池的效率超过12％。
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