The electrical response to changes in relative humidity of sputtered thin silicon-tin films with different chemical compositions was evaluated at room temperature by means of complex impedance spectroscopy in the frequency range of 400 Hz-40 MHz. The results showed that the surface morphology, the level of porosity in the mesoporous region, and the chemical composition of the thin films contributed to the sensors’ sensitivity to water vapour. The thin films deposited at a vacuum pressure of 1 Pa presented better sensitivity towards humidity variations than the films deposited at 0.6 Pa. In particular, the thin Si_0.72Sn_0.28 film, the best suited for humidity detection, displayed a p-type conduction with an almost linear variation of the impedance modulus with the increase in the relative humidity content. Moreover, humidity tests performed 1 and 6 months after the first run revealed that the electrical response of this sensor is quite stable over time.

在室温下，通过复阻抗谱在400 Hz-40 MHz的频率下评估对化学成分不同的溅射硅锡薄膜的相对湿度变化的电响应。结果表明，表面形貌，中孔区域的孔隙率水平以及薄膜的化学成分有助于传感器对水蒸气的敏感性。在1 Pa的真空压力下沉积的薄膜比在0.6 Pa下沉积的薄膜对湿度变化的敏感性更高。特别是，薄的Si _0.72 Sn _0.28最适合湿度检测的薄膜显示出p型导电性，随着相对湿度的增加，其阻抗模量几乎呈线性变化。此外，首次运行后1个月和6个月进行的湿度测试表明，此传感器的电响应随时间推移非常稳定。