The control of the microstructure and patterning of 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) film is essential for high-performance TES-ADT field-effect transistors (FETs) as a NO₂ gas sensor. In this study, a binary blend film based on TES-ADT and insulating polymer was annealed by solvent vapor with patterned PDMS molds. The solvent-containing PDMS mold led to the TES-ADT crystallization under the phase-separation between TES-ADT and PMMA. This resulted in highly crystalline micro-strip films where TES-ADT and the insulating polymer were phase-separated on top and bottom, respectively. The micro-strip structures can have superior gas sensor performance because they have additional gas diffusion paths compared to non-patterned structures. Initial investigations to clarify morphology and microstructure of the films revealed that lateral phase separation got dominant with increasing the portion of the insulating polymer. The blended films were then used as the active layer in the FET-based gas sensors. The use of blended films instead of non-blended TES-ADT film in FETs is advantageous in reducing both the threshold voltage and subthreshold slope while compromising the field-effect mobility. The sensing response as the gas sensors is slightly lower in the blended TES-ADT FET than in the non-blended TES-ADT FET. However, the utilization of blended films significantly enhanced the bias-stress stability. Accordingly, a uniform baseline of the sensor performance was achieved in TES-ADT: insulating polymer blended FETs. This trend was in contrast to an abrupt decrease in the sensing signals of the non-blended TES-ADT FETs. The enhanced bias stability of the blended FETs was exhibited as a result of covering the silanol groups in SiO₂ with a phase-separated insulating polymer. Our results provide a route for to the optimization of bias stability and response in TES-ADT micro-strip gas sensors through the application of a one-step blend technology.

5,11-双（三乙基甲硅烷基乙炔基）蒽噻吩（TES-ADT）薄膜的微观结构和图案控制对于作为NO ₂的高性能TES-ADT场效应晶体管（FET）至关重要气体传感器。在这项研究中，将基于TES-ADT和绝缘聚合物的二元共混膜通过溶剂蒸汽与带图案的PDMS模具进行退火。含溶剂的PDMS模具在TES-ADT和PMMA之间的相分离下导致TES-ADT结晶。这导致了高度结晶的微带膜，其中TES-ADT和绝缘聚合物分别在顶部和底部发生了相分离。微带结构可以具有卓越的气体传感器性能，因为与非图案结构相比，它们具有更多的气体扩散路径。初步研究澄清了薄膜的形貌和微观结构，发现横向相分离随着绝缘聚合物的增加而占主导地位。然后将共混的薄膜用作基于FET的气体传感器中的有源层。在FET中使用混合膜代替非混合TES-ADT膜在降低阈值电压和亚阈值斜率的同时降低了场效应迁移率的优势。混合TES-ADT FET中气体传感器的感测响应略低于非混合TES-ADT FET中的气体传感器。然而，混合膜的利用显着增强了偏应力稳定性。因此，在TES-ADT：绝缘聚合物混合FET中实现了传感器性能的统一基准。这种趋势与非混合TES-ADT FET的感应信号突然下降形成对比。由于覆盖了SiO中的硅烷醇基团，混合FET的偏置稳定性得到了增强 混合膜的利用显着增强了偏应力的稳定性。因此，在TES-ADT：绝缘聚合物混合FET中实现了传感器性能的统一基准。这种趋势与非混合TES-ADT FET的感应信号突然下降形成对比。由于覆盖了SiO中的硅烷醇基团，混合FET的偏置稳定性得到了增强 混合膜的利用显着增强了偏应力的稳定性。因此，在TES-ADT：绝缘聚合物混合FET中实现了传感器性能的统一基准。这种趋势与非混合TES-ADT FET的感应信号突然下降形成对比。由于覆盖了SiO中的硅烷醇基团，混合FET的偏置稳定性得到了增强₂具有相分离的绝缘聚合物。我们的结果通过一步混合技术的应用，为优化TES-ADT微带气体传感器的偏置稳定性和响应提供了一条途径。