The irradiation temperature of silicon carbide (SiC) was determined post-irradiation by examination of the recovery of the electrical resistivity due to thermal annealing in a rapid heating/cooling optical furnace. High-purity, high-resistivity grade SiC is routinely used as a passive temperature monitor in neutron irradiation studies at the High Flux Isotope Reactor (HFIR), and this paper presents an alternative automated technique for determination of the irradiation temperature the SiC experienced. Neutron collisions with the atoms results in displaced lattice atoms (interstitials) that act as electron donors yielding a significant decrease in electrical resistivity. The irradiation defects become thermodynamically unstable and start to recombine, when annealed above the irradiation temperature, resulting in a recovery of the electrical resistivity. The resistivity is measured at a fixed elevated temperature above ambient, which is below the target irradiation temperature. When the resistivity is plotted as a function of annealing temperatures, a clear increase is observed due to the recovery of irradiation defects. We have demonstrated that this electrical resistivity measurement of SiC is effective to determine irradiation temperature of SiC. Energy levels of various defects in SiC were calculated from Arrhenius plots of electrical conductivity versus inverse temperature.

通过检查在快速加热/冷却光学炉中由于热退火引起的电阻率的恢复来确定照射后的碳化硅（SiC）的照射温度。高通量同位素反应堆（HFIR）在中子辐照研究中通常将高纯度，高电阻率的SiC用作被动温度监测器，本文提出了另一种自动技术来确定SiC经历的辐照温度。中子与原子的碰撞导致位移的晶格原子（间隙）充当电子给体，导致电阻率显着降低。当在高于辐射温度的温度下退火时，辐射缺陷变得热力学不稳定并开始重新结合，导致电阻率恢复。在高于环境的固定高温下测量电阻率，该温度低于目标辐照温度。当将电阻率绘制为退火温度的函数时，由于辐照缺陷的恢复，观察到明显的增加。我们已经证明，这种SiC电阻率测量可以有效地确定SiC的辐照温度。SiC中各种缺陷的能级由电导率与逆温度的阿伦尼乌斯曲线计算得出。由于辐射缺陷的恢复，观察到明显增加。我们已经证明，这种SiC电阻率测量可以有效地确定SiC的辐照温度。SiC中各种缺陷的能级由电导率与逆温度的阿伦尼乌斯曲线计算得出。由于辐射缺陷的恢复，观察到明显增加。我们已经证明，这种SiC电阻率测量可以有效地确定SiC的辐照温度。SiC中各种缺陷的能级由电导率与逆温度的阿伦尼乌斯曲线计算得出。