Mulitipe stoichiometric ratio of two-dimensional (2D) transition metal dichalcogenides (TMDCs) attracted considerable interest for their unique chemical and physical properties. Here we developed a chemical vapor deposition (CVD) method to controllably synthesize ultrathin NiS and NiS₂ nanoplates. By tuning the growth temperature and the amounts of the sulfur powder, 2D non-layered NiS and NiS₂ nanoplates can be selectively prepared with the thickness of 2.0 and 7.0 nm, respectively. X-ray diffraction (XRD) and transmission electron microscopy (TEM) characterization reveal that the 2D NiS and NiS₂ nanoplates are high-quality single crystals in the hexagonal and cubic phase, respectively. Electrical transport studies show that electrical conductivities of the 2D NiS and NiS₂ nanoplates are as high as 4.6 × 10⁵ and 6.3 × 10⁵ S·m⁻¹, respectively. The electrical results demonstrate that the synthesized metallic NiS and NiS₂ could serve as good electrodes in 2D electronics.

二维（2D）过渡金属二硫代双氰化物（TMDC）的多化学计量比因其独特的化学和物理性质而引起了人们的极大兴趣。在这里，我们开发了一种化学气相沉积（CVD）方法来可控制地合成超薄NiS和NiS ₂纳米板。通过调节生长温度和硫粉的量，可以选择性地制备厚度分别为2.0和7.0 nm的2D非层状NiS和NiS ₂纳米板。X射线衍射（XRD）和透射电子显微镜（TEM）表征显示2D NiS和NiS ₂纳米板分别是六方相和立方相的高质量单晶。电迁移研究表明，二维NiS和NiS ₂纳米板的电导率分别高达4.6×10 ⁵和6.3×10 ⁵ S·m ^-1。电学结果表明，合成的金属NiS和NiS ₂可以作为二维电子学中的良好电极。