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A systematic study in synthesis of CeO 2 films on Ni tapes from different precursors using sol-gel process
Journal of the Australian Ceramic Society ( IF 1.8 ) Pub Date : 2020-07-02 , DOI: 10.1007/s41779-020-00501-0
Erdal Celik , Recep Yigit , Serdar Yildirim , Esref Avci , Yusuf Suat Hascicek

A systematic study was comparatively performed in the synthesis of CeO2 films on Ni tapes from different precursors using sol-gel process. With this concept, CeO2 thin and thick films were deposited on Ni tapes by a reel-to-reel sol-gel dip-coating process using alkoxide- and nitrate-based precursors. The films were heat-treated at different temperatures for different times under 4%H2-Ar atmosphere. The structural and microstructural properties of these films were determined through XRD and ESEM. The structural and microstructural properties of these films depend on the preparation conditions. The films were found to be in the amorphous state until 300 °C or 400 °C. Upon raising heat-treatment temperature to nearly 500 °C, CeO2 polycrystalline films with a cubic structure were grown on Ni tape. It was determined that different anions and their concentrations strongly influenced the structure and microstructure of the films. Ce(NO3)3.6H2O and colloidal CeO2-based precursors showed better properties than the other ones as free cracks on the surface. It was determined that the annealing conditions for the texture structure were temperature (1150 °C), time (10 min), and specific media (4%H2-Ar flow). Depending on these conditions, the most pronounced texture was acquired in a thickness range of 100 and 300 nm in CeO2 films.



中文翻译:

用溶胶-凝胶法从不同前体在镍带上合成CeO 2薄膜的系统研究

比较研究了使用溶胶-凝胶法从不同的前体在镍带上合成CeO 2膜的系统研究。有了这个概念,CeO 2薄膜和厚膜就通过使用醇盐和硝酸盐类前体的卷到卷溶胶-凝胶浸涂工艺沉积在镍带上。在4%H 2 -Ar气氛下,将膜在不同的温度下热处理不同的时间。这些膜的结构和微观结构性质通过XRD和ESEM确定。这些膜的结构和微观结构性质取决于制备条件。发现该膜直到300℃或400℃都处于非晶态。将热处理温度提高到接近500°C时,CeO 2在镍带上生长具有立方结构的多晶膜。已确定不同的阴离子及其浓度强烈影响薄膜的结构和微观结构。的Ce(NO 33 ·6H 2 O和氧化铈的胶体-基前体显示出比其他的在表面上没有裂纹更好的性质。确定该织构结构的退火条件为温度(1150°C),时间(10分钟)和特定介质(4%H 2 -Ar流量)。取决于这些条件,在CeO 2薄膜中,最明显的纹理是在100和300 nm的厚度范围内获得的。

更新日期:2020-07-02
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