Two-dimensional multiferroics, simultaneously harboring antiferromagneticity and ferroelasticity, are essential and highly sought for miniaturized device applications, such as high-density data storage, but thus far they have rarely been explored. Herein, using first principles calculations, we identified two-dimensional antiferromagnetic ferroelasticity in an AgF₂ monolayer that is dynamically and thermally stable, and can be easily fabricated from its bulk. The AgF₂ monolayer is an antiferromagnetic semiconductor with large spin polarization, and with great structural distortion due to its intrinsic Jahn–Teller effect when thinning the AgF₂ down to a monolayer. Additionally, it features excellent ferroelasticity with high transition signal and a low switching barrier, rendering the room-temperature nonvolatile memory accessible. Such coexistence of antiferromagneticity and ferroelasticity is of great significance to the study of two-dimensional multiferroics and also renders the AgF₂ monolayer a promising platform for future multifunctional device applications.

中文翻译：

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AgF2单层中二维反铁磁铁弹性的预测。

同时具有反铁磁性和铁弹性的二维多铁磁是必不可少的，并且对于小型设备应用（例如高密度数据存储）来说，它是极力追求的，但是到目前为止，它们很少被探索。在这里，我们使用第一性原理计算，在动态和热稳定的AgF ₂单层中确定了二维反铁磁铁弹性，可以轻松地从其体积中制造出该二维铁磁铁弹性。AgF ₂单层是一种反铁磁半导体，具有大的自旋极化，并且在减薄AgF ₂时由于其固有的Jahn-Teller效应而具有很大的结构变形下降到单层。此外，它具有出色的铁弹性，具有高跃迁信号和低开关势垒，从而可访问室温非易失性存储器。反铁磁和铁弹性的这种共存对二维多铁磁学的研究具有重要意义，也使AgF ₂单层成为未来多功能器件应用的有前途的平台。