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Giant magnetoelectric effect in perpendicularly magnetized Pt/Co/Ta ultrathin films on a ferroelectric substrate
Materials Horizons ( IF 12.2 ) Pub Date : 2020-07-01 , DOI: 10.1039/d0mh00796j
Aitian Chen 1, 2, 3, 4 , Haoliang Huang 5, 6, 7, 8, 9 , Yan Wen 1, 2, 3, 4 , Wenyi Liu 5, 6, 7, 8, 9 , Senfu Zhang 1, 2, 3, 4 , Jürgen Kosel 2, 3, 4, 10, 11 , Weideng Sun 9, 12, 13, 14 , Yonggang Zhao 9, 12, 13, 14 , Yalin Lu 5, 6, 7, 8, 9 , Xi-Xiang Zhang 1, 2, 3, 4
Affiliation  

Perpendicularly magnetized layers are essential for information storage to increase the storage density. Modulating perpendicular magnetization by an electric field offers a promising solution to lower energy consumption. Here, we demonstrate a remarkable electric field modulation of perpendicular magnetization in perpendicularly magnetized Pt/Co/Ta ultrathin films on a ferroelectric substrate. By measuring the anomalous Hall effect under in situ electric fields, we observe a giant magnetoelectric effect with the large converse magnetoelectric coefficient of −2.1 × 10−6 s m−1 at H = −20 Oe and −0.9 × 10−6 s m−1 at H = 0 Oe, which is comparable to that in multiferroic heterostructures with in-plane magnetization. Additionally, Kerr imaging shows that electric fields observably affect magnetic domain structures of the Pt/Co/Ta ultrathin films indicating a giant magnetoelectric effect. We further measure in situ X-ray diffraction and X-ray reflectivity with electric fields, which suggests that this giant magnetoelectric effect is attributed to strain-mediated magnetoelectric coupling and is closely related to electric-field-varied interface roughness. Our findings highlight the role of interface roughness in exploring electrical control of perpendicular magnetization.

中文翻译:

铁电衬底上垂直磁化的Pt / Co / Ta超薄膜中的巨磁电效应

垂直磁化层对于信息存储以增加存储密度至关重要。通过电场调制垂直磁化强度为降低能耗提供了有希望的解决方案。在这里,我们展示了铁电基板上垂直磁化的Pt / Co / Ta超薄膜中垂直磁化的显着电场调制。通过下测量反常霍耳效应原位电场,我们观察到与大相反的磁电系数的-2.1×10巨磁电效应-6 SM -1ħ = -20奥斯特和-0.9×10 -6 SM - 1ħ = 0 Oe,这与具有面内磁化的多铁异质结构相当。此外,克尔成像显示,电场可观察到影响Pt / Co / Ta超薄膜的磁畴结构,表明存在巨大的磁电效应。我们进一步测量了电场的原位X射线衍射和X射线反射率,这表明这种巨大的磁电效应归因于应变介导的磁电耦合,并且与电场可变的界面粗糙度密切相关。我们的发现突出了界面粗糙度在探索垂直磁化的电气控制中的作用。
更新日期:2020-09-01
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