Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski–Krastanov growth mechanism. Here, we propose a novel strain-driven mechanism to form 3D In-rich clusters on the NW sidewalls and also on the NW top facets. The focus is on ternary InGaAs nanowire quantum dots which are particularly attractive for producing single photons at telecommunication wavelengths. In(Ga)As clusters were realized on the inclined top facets and also on the {11-2} corner facets of GaAs NW arrays by depositing InAs at a high growth temperature (630 °C). High-angle annular dark-field scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy confirms that the observed 3D clusters are indeed In-rich. The optical functionality of the as-grown samples was verified using optical technique of cathodoluminescence. Emission maps cl...

中文翻译：

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GaAs纳米线中轴向和径向In（Ga）As团簇的面驱动形成

将量子点嵌入纳米线（NWs）中构成了量子光子技术的一个有前途的基石。在GaAs纳米线上生长InAs量子点的早期尝试是基于Stranski-Krastanov生长机制的。在这里，我们提出了一种新颖的应变驱动机制，以在NW侧壁以及NW顶面上形成3D In-rich簇。重点是三元InGaAs纳米线量子点，这对于在电信波长下产生单光子特别有吸引力。通过在高生长温度（630°C）下沉积InAs，可以在GaAs NW阵列的倾斜顶面和{11-2}角面上实现In（Ga）As簇。高角度环形暗场扫描透射电子显微镜与能量色散X射线光谱学的结合证实了观察到的3D簇确实富含In。使用阴极发光的光学技术验证了所生长样品的光学功能。排放图分类