The porous silicon as substrate material was prepared by metal-assisted chemical etching (MACE) method. The TiO₂ nanowire cover layer on porous silicon was prepared by hydrothermal method. Thus, porous Si/TiO₂ nanowire heterostructure was obtained. The formation of the porous Si/TiO₂ nanowire heterostructure was confirmed by X-ray diffraction (XRD) and scanning electron microscope (SEM). The results of diffuse reflection spectra (DRS) show that porous Si/TiO₂ nanowire has the highest antireflectivity among the four tested samples. Photoelectric catalysis (PEC) and photocurrent measurement show that the porous Si/TiO₂ nanowire heterostructure has higher photoelectric catalytic and photocurrent activity than the other samples under the simulated solar light and visible light irradiation. The results showed that the construction of the porous Si/TiO₂ nanowire heterostructure improved the photoelectrochemical properties, which is attributed to the heterogeneous effect and window effect.

中文翻译：

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多孔Si / TiO2纳米线异质结结构的光电化学性质

通过金属辅助化学蚀刻（MACE）方法制备了多孔硅作为衬底材料。采用水热法制备了多孔硅上的TiO ₂纳米线覆盖层。因此，获得了多孔Si / TiO ₂纳米线异质结构。通过X射线衍射（XRD）和扫描电子显微镜（SEM）确认了多孔Si / TiO ₂纳米线异质结构的形成。漫反射光谱（DRS）的结果表明，多孔Si / TiO ₂纳米线在四个测试样品中具有最高的抗反射性。光电催化（PEC）和光电流测量表明，多孔Si / TiO ₂在模拟的太阳光和可见光照射下，纳米线异质结构比其他样品具有更高的光电催化和光电流活性。结果表明，多孔Si / TiO ₂纳米线异质结构的构建改善了光电化学性能，这归因于异质效应和窗口效应。