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Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator.
Physical Review Letters ( IF 8.1 ) Pub Date : 2020-07-01 , DOI: 10.1103/physrevlett.125.017204
Tao Liu 1 , James Kally 2 , Timothy Pillsbury 2 , Chuanpu Liu 1 , Houchen Chang 1 , Jinjun Ding 1 , Yang Cheng 3 , Maria Hilse 2 , Roman Engel-Herbert 2 , Anthony Richardella 2 , Nitin Samarth 2 , Mingzhong Wu 1
Affiliation  

We report the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the damping in Y3Fe5O12. Such TSS-induced changes become more pronounced as the temperature decreases from 300 to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.

中文翻译:

邻近拓扑绝缘子的电磁绝缘子中磁性的变化。

我们报告了磁绝缘子中磁性的变化 ÿ35Ø12 相邻拓扑绝缘体中通过拓扑表面状态(TSS)形成的薄膜 23薄膜。铁磁共振测量表明,TSS在23 产生垂直的磁各向异性,导致回旋磁比降低,并增强 ÿ35Ø12。当温度从300 K降低到50 K时,这种TSS引起的变化变得更加明显。这些结果表明了一种控制磁性薄膜中磁性的全新方法。
更新日期:2020-07-01
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