Excitonic properties in quantum dot (QD) structure are essential properties for applications in quantum computing, cryptography, and photonics. Top-down fabrication and bottom-up growth by self-assembling for forming the QDs have shown their usefulness. These methods, however, still inherent issues in precision integrating the regimes with high reproducibility and positioning to realize the applications with on-demand quantum properties on Si platforms. Here, we report on a rational synthesis of embedding atomically thin InAs in nanowire materials on Si by selective-area regrowth. An extremely slow growth rate specified for the synthesis demonstrated to form smallest quantum structures reaching nuclear size, and provided good controllability for the excitonic states on Si platforms. The system exhibited sharp photoluminescence spectra originating from exciton and bi-exciton suggesting the carriers were confined inside the nuclei. The selective-area regrowth would open new approach to integrate the exciton states with Si platforms as building-blocks for versatile quantum systems.

量子点（QD）结构中的激子性质是量子计算，密码学和光子学中应用的必要属性。通过自组装形成量子点的自上而下的制造和自下而上的生长已显示出其有用性。然而，这些方法仍然是固有的问题，它们需要精确地集成具有高可重复性的方案和定位，以实现在Si平台上具有按需量子特性的应用。在这里，我们报告了通过选择性区域再生长在Si上的纳米线材料中嵌入原子薄InAs的合理合成。合成中指定的极慢的生长速率证明可以形成达到核尺寸的最小量子结构，并为Si平台上的激子态提供了良好的可控性。该系统显示出源自激子和双激子的清晰的光致发光光谱，表明载体被限制在核内。选择性区域的再生长将为激子态与Si平台的集成开辟新方法，而后者是通用量子系统的基础。