Micropillar arrays with radial p–n junctions are attractive for photovoltaic applications, because the light absorption and carrier collection become decoupled. The main challenge in manufacturing radial p–n junctions is achieving shallow (dopant depth <200 nm) and heavy doping (>10²⁰ cm⁻³) that will allow the formation of a quasi-neutral region (QNR) and space charge region (SCR) in its tiny geometry. This experimental study investigates an approach that allows shallow and heavy doping in silicon micropillars. It aims to demonstrate that silicon dioxide (SiO₂) can be used to control the dopant penetration depth in silicon micropillars.

中文翻译：

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控制硅微柱中的掺杂深度

具有径向p–n结的微柱阵列对于光伏应用很有吸引力，因为光吸收和载流子收集变得解耦。制造径向p–n结的主要挑战是实现浅（掺杂深度<200 nm）和重掺杂（> 10 ²⁰ cm ^-3），这将允许形成准中性区（QNR）和空间电荷区（ SCR）的几何形状。这项实验研究研究了允许在硅微柱中进行浅掺杂和重掺杂的方法。它旨在证明二氧化硅（SiO ₂）可用于控制硅微柱中掺杂剂的渗透深度。